Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

3.1W Ta 110W Tc

Current - Continuous Drain (Id) @ 25℃  

23A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2005

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

117mOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.1W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

117m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1450pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

67ns

Vgs (Max)  

±20V

Fall Time (Typ)  

51 ns

Continuous Drain Current (ID)  

-23A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

-100V

Pulsed Drain Current-Max (IDM)  

92A

Dual Supply Voltage  

100V

Avalanche Energy Rating (Eas)  

84 mJ

Nominal Vgs  

4 V

Height  

9.65mm

Length  

10.668mm

Width  

4.826mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free